产品介绍: ● Trench Power MOSFET technology ● Low RDS(ON) at 10 V GS ● Low Gate Charge
产品介绍: ● Trench Power MOSFET technology ● Combined of low RDS(ON) and wide safe operatiing area (SOA)
产品介绍: ● Low source-source ON resistance:Rss(on) typ. = 5.6 mΩ, (VGS = 4.5 V) ● CSP(Chip Size Package) ● RoHS compliant (EU RoHS / MSL:Level 1 compliant)
产品介绍: ● The FNK10N02-A uses advanced trenchtechnology to provide excellent RDS(ON)and low gate charge .It can be used in awide variety of applications
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