FNK10N02C 2022-12-28 08:59:34
产品介绍1: ● VDS =20V,ID =100A RDS(ON) <3.3m Ω @ VGS=10V (Typ2.5mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation ● Good stability and uniformity with high EAS ● Special process technology for high ESD capability
上一个 FNK10N02-A
下一个 FNK10N25B