English
-
Wuxi Qianye Micro Nano Technology Co., Ltd19 years of research and development of semiconductor power devicesSpecializing in power semiconductor device research and development for nearly 20 years, with an industry experienced R & D team, the company has been committed to the development and application of semiconductor power devices since its establishment, the products are widely used in various consumer markets. Cooperate with world class fabs to lay a solid foundation for high quality products. In 2018, the superjunction FET made breakthrough progress and reached the advanced level of the industry, becoming one of the leading semiconductor power device manufacturers in China. The company has advanced layout in the field of IGBT and silicon carbide, and has applied for many authorized patents. In 2020, its own packaging form TDHD came out, removing the packaging inductance, packaging internal resistance, packaging thermal resistance switch speed greatly improved, MOS itself heating greatly reduced, heat dissipation greatly increased. In 2021, a 100,000-level dust-free workshop will be established to achieve mass production of TDHD and WLCSP packaging.The company is headquartered in Wuxi City, Jiangsu Province, and has branches and offices in Hong Kong, Huizhou, Shenzhen and Shanghai. Committed to building the company into a domestic first-class, the world's advanced semiconductor power device factory.
企业文化/company culture
Take technology as the rootHumanized managementBe market orientedIn the existing technical field of continuous improvement, breakthrough innovation, to create competitive productsIt aims to provide a platform for employees to play their own advantagesGrasp the pulse of The TimesBe the market leader -
2003
2005
2006
2011
2018
2019
2021
-
2003
Established Qianye Electronics in Huizhou, Guangdong Province
-
2005
Negotiated chip cooperation with TSMC and successfully mass-produced low voltage power MOS
at TSMC by the end of the year
-
2006
Mass production of medium and low voltage MOS
-
2011
Establishing MCU R&D studio in Shanghai
-
2018
650V super junction MOSFET has made breakthrough progress and reached the industry's advanced level;
The main platform of a single potassium protection IC has been successfully constructed,
and two ICs can be mass-produced.
-
2019
Establishing a research and development center in Wuxi, Jiangsu Province
-
2021
Obtained the Jiangsu Province Gazelle Plan to cultivate enterprises
Self packaging form and WLCSP achieve independent mass production
-
-
-
Phone: 13380690588; QQ： 283893409 Email: jiw@fnk-tech.com
Address: 4th Floor, Building 10, No. 68 Jinlong Avenue, Huizhou City, Guangdong Province
615, 6th Floor, Building A3, 777 Jianzhu West Road, Binhu District, Wuxi City
Copyright© Wuxi Qianye Micro Nano Technology Co., Ltd
Customer service phone number
13380690588